Preparation of cerium-containing precursors and deposition of cerium-containing films

摘要

Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

主权项

1. A lanthanide-containing precursor having the general formula:
Ln(R1Cp)m(R2—N—C(R4)═N—R2)n,wherein:
Ln=Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu; R1 is selected from the group consisting of H and a C1-C5 alkyl chain; R2 is selected from the group consisting of H and a C1-C5 alkyl chain; R4 is selected from the group consisting of H and Me; n and m range from 1 to 2; and the precursor has a melting point below approximately 105° C.