Photoelectric conversion device and imaging device

摘要

A photoelectric conversion device includes an organic photoelectric conversion layer, and suppresses sensitivity degradation caused by the light irradiation. A photoelectric conversion device 100 is formed by stacking a first electrode layer 104, a photoelectric conversion layer 15 including an organic material, and a second electrode layer 108 on a substrate 101, in which the photoelectric conversion layer 15 has a bulk hetero structure of a P-type organic semiconductor and an N-type organic semiconductor, and a difference between an ionization potential of the P-type organic semiconductor and an apparent ionization potential of the bulk hetero structure is 0.50 eV or less. Accordingly, it is possible to suppress sensitivity degradation caused by the light irradiation.

主权项

1. A photoelectric conversion device formed by stacking a first electrode layer, a photoelectric conversion layer including an organic material, and a second electrode layer on a substrate,
wherein: the photoelectric conversion layer has a bulk hetero structure of a P-type organic semiconductor and an N-type organic semiconductor; the difference between the ionization potential of the P-type organic semiconductor and the apparent ionization potential of the bulk hetero structure is 0.50 eV or less; the P-type organic semiconductor is a compound selected from the following Compounds 4, 5, 10 and 11: the N-type organic semiconductor is fullerene C60 or a multimer of fullerene C60; the fluorescent maximum wavelength of the bulk hetero structure at 25° C. is 760 nm or more; the fluorescent quantum yield of the bulk hetero structure at 25° C. is 0.2% or less; and the difference in electron affinity between the P-type organic semiconductor and the fullerene C60 or the multimer of fullerene C60 is 0.30 eV or more.