| 发明名称 |
Inductively coupled plasma ion source with multiple antennas for wide ion beam |
| 摘要 |
A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz. |
| 申请公布号 |
US8809803(B2) |
申请公布日期 |
2014.08.19 |
| 申请号 |
US201313961060 |
申请日期 |
2013.08.07 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Biloiu Costel;Olson Joseph C.;Bell Edward W.;Sieradzki Manny |
| 分类号 |
H01J27/00;H01J37/08 |
主分类号 |
H01J27/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A wide ion beam source comprising:
a plurality of RF windows arranged in a predetermined relationship; a single plasma chamber disposed on a first side of the plurality of RF windows; a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side; and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz. |
| 地址 |
Gloucester MA US |
