Semiconductor element-embedded substrate, and method of manufacturing the substrate

摘要

A semiconductor element-embedded substrate includes a semiconductor element; a chip component; a peripheral insulating layer covering at least the outer circumferential side surfaces thereof; an upper surface-side wiring line provided on the upper surface side of the substrate; and a lower surface-side wiring line provided on the lower surface side of the substrate. The built-in semiconductor element includes a terminal on the upper surface side thereof, and this terminal is electrically connected to the upper surface-side wiring line. The built-in chip component includes an upper surface-side terminal electrically connected to the upper surface-side wiring line; a lower surface-side terminal electrically connected to the lower surface-side wiring line; and a through-chip via penetrating through the chip component to connect the upper surface-side terminal and the lower surface-side terminal.

主权项

1. A semiconductor element-embedded substrate comprising:
a semiconductor element; a chip component; a peripheral insulating layer covering at least outer circumferential side surfaces of the semiconductor element and the chip component; an upper surface-side wiring line provided on the upper surface side of the substrate; and a lower surface-side wiring line provided on the lower surface side of the substrate, wherein:
the semiconductor element comprises a terminal on the upper surface side thereof, the terminal being electrically connected to the upper surface-side wiring line,the chip component comprises:
an upper surface-side terminal electrically connected to the upper surface-side wiring line;a lower surface-side terminal electrically connected to the lower surface-side wiring line; anda through-chip via penetrating through the chip component to connect the upper surface-side terminal and the lower surface-side terminal,the semiconductor element comprises silicon substrate used as a base material,the chip component comprises silicon substrate used as a base material, anda plurality of the chip components is disposed such that the chip components surround the outer circumferential side surfaces of the semiconductor element.