Oriented carbon nanotube manufacturing method

摘要

Disclosed is a method capable of accelerating the growth of oriented carbon nanotubes when manufacturing the oriented carbon nanotubes by a plasma CVD. Under the circulation of a gas which is the raw material of the carbon nanotubes, plasma is generated by an antenna (6) provided in a depressurized treatment chamber (2), and substrates (9, 15) provided with a reaction prevention layer and a catalyst material layer which are formed on a base material are held at a distance, to which a radical can reach and an attack of an ion generated as a by-product of the radical can be avoided, from a plasma generation area (7). The tip (6a) of the antenna (6) can be controlled so as to match with the position of the anti-node of a stationary wave (27) of microwaves.

主权项

1. A manufacturing method of oriented carbon nanotubes comprising
using an antenna typed plasma CVD device, wherein the CVD device is provided with a treatment chamber and a microwave applying member disposed outside the treatment chamber, the treatment chamber is hermetically connected to the microwave applying member via a quartz window, the microwave applying member is provided with a first water cooling pipe inside, the first water cooling pipe being hermetically connected to the quartz window, and the quartz window is provided with an antenna having a tip protruding to an inside of the treatment chamber, under the circulation of a gas which is the raw material of the carbon nanotubes, microwaves applied by the microwave applying member are introduced into the treatment chamber depressurized to a predefined pressure via the quartz window to generate plasma at the antenna, a substrate which is provided with a reaction prevention layer formed on a base material and a catalyst material layer formed on the reaction prevention layer is held at a distance to a plasma generation area which is capable of preventing the substrate from being attacked by an ion generated as a by-product of a radical generated at the plasma generation area and is reachable by the radical at a radical state, and the tip of the antenna is controlled to match with the position of an anti-node of a stationary wave of microwaves.