Variable resistance memory device and method of manufacturing the same

摘要

A variable resistance memory device has memory cells that are operated by Joule's heat and which are highly thermally efficient. Conductive patterns are formed on a substrate; sacrificial patterns exposing a portion of the top surface of each of the conductive patterns are formed on the conductive patterns, lower electrodes are formed by etching upper portions of the conductive patterns using the sacrificial patterns as an etching mask, then mold patterns are formed on the lower electrodes and cover exposed sidewall surfaces of the sacrificial patterns, and then the sacrificial patterns are replaced with variable resistance patterns.

主权项

1. A variable resistance memory device comprising:
a substrate; lower electrodes disposed on the substrate; patterns having variable resistance disposed on the lower electrodes and in contact therewith; and upper electrodes disposed on the variable resistance patterns, wherein each of the lower electrodes has at least first and second upwardly facing surfaces located at different heights in the device, and sidewall surfaces terminating at the first upwardly facing surface, the first upwardly facing surface of each of the lower electrodes is a top surface of the lower electrodes and contacts the variable resistance patterns disposed thereon, and at least one of the sidewall surfaces of each of the lower electrodes is aligned with a sidewall surface of the variable resistance patterns disposed thereon.