Method for manufacturing a semiconductor device comprising a guard ring between a cell region and a peripheral region

摘要

A semiconductor device including a cell region and a peripheral region, the semiconductor device comprising: a guard ring region provided between the cell region and the peripheral region, the guard ring region having a barrier structure.

主权项

1. A method for manufacturing a semiconductor memory device, the method comprising:
providing a substrate having a cell region, a peripheral region, and a guard ring region provided between the cell region and the peripheral region; etching a second active region in the guard ring region to form a recess in the substrate; filling a conductive material into the recess; and depositing an insulating film within the recess over the conductive material to form a barrier gate in the second active region of the guard ring region, wherein the barrier gate has a guard ring structure surrounding the cell region, and wherein the cell region has a first active region and a first device isolation structure, the peripheral region has a second device isolation structure, and the guard ring region has the second active region between the first device isolation structure and the second device isolation structure.