Methods for forming high-K crystalline films and related devices

摘要

This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

主权项

1. A method of fabricating a semiconductor layer assembly, the method comprising:
depositing a first metal oxide layer above an electrode,
the first metal oxide layer comprises zirconium oxide and having a first crystalline form,wherein the first metal oxide layer is deposited using a first oxygen reagent at or below 220 degrees centigrade; and depositing a second metal oxide layer using a second oxygen reagent on the first metal oxide layer,
the second metal oxide layer comprises zirconium oxide and having a second crystalline form different from the first crystalline form,wherein the second oxygen reagent is more reactive than the first oxygen reagent.