Nonvolatile semiconductor memory device

摘要

According to one embodiment, there is provided a nonvolatile semiconductor memory device including a substrate, a laminated film which has a configuration where first insulating layers and first electrode layers are alternately laminated in a first direction vertical to the substrate, a second insulating layer formed on an inner wall of a first through hole pierced in the first insulating layers and the first electrode layers along the first direction, an intermediate layer formed on a surface of the second insulating layer, a third insulating layer formed on a surface of the intermediate layer, and a pillar-like first semiconductor region which is formed on a surface of the third insulating layer and extends along the first direction.

主权项

1. A nonvolatile semiconductor memory device comprising:
a substrate; a laminated film which has a configuration where first insulating layers and first electrode layers are alternately laminated in a first direction vertical to the substrate; a second insulating layer formed on an inner wall of a first through hole pierced in the first insulating layers and the first electrode layers along the first direction; an intermediate layer formed on a surface of the second insulating layer; a third insulating layer formed on a surface of the intermediate layer; and a pillar-like first semiconductor region which is formed on a surface of the third insulating layer and extends along the first direction, wherein the intermediate layer comprises: charge storage regions which mainly contain carbon at positions where the charge storage regions are adjacent to the first electrode layer in a second direction orthogonal to the first direction; and insulating regions which electrically separate the charge storage regions adjacent to each other along the first direction at positions where the insulating regions are adjacent to the first insulating layer in the second direction.