Ion source and a method for in-situ cleaning thereof

摘要

An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.

主权项

1. An ion source, comprising:
a plurality of walls defining an inner volume in which plasma is generated, each wall comprising an inner side facing said inner volume and an outer side, at least one of said walls comprises a heating unit so as to affect the temperature of said inner volume; one or more inlets for introducing a feed gas to said inner volume; an indirectly heated cathode disposed at a first side of the ion source for ionizing said feed gas; and a repeller disposed at the second side of the ion source, the second side being opposite to the first side, wherein said wall that comprises a heating unit comprises a second insulating layer disposed on a base, a serpentine shaped circuit disposed on said second insulating layer, where said circuit extends continuously from the first side to the second side of the ion source, a first insulating layer formed on said serpentine shaped circuit, and a graphite layer disposed on said first insulating layer, wherein said graphite layer forms said inner side of the wall and heat generated by said serpentine shaped circuit is emitted toward said inner volume.