Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications

摘要

A method and structures are provided for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications. A deep oxygen implant is provided in a selected region of substrate. A first deep trench and second deep trench are formed above the deep oxygen implant. The first deep trench is a generally large rectangular box deep trench of minimum width and the second deep trench is a second small area deep trench centered within the first rectangular box deep trench. Ion implantation at relatively high ion pressure and annealing is utilized to form highly doped N+ regions or P+ regions both inside and outside the outside the first deep trench and around the outside the second deep trench region. These regions provide the collector and emitter respectively, and the existing substrate region provides the base region between the collector and emitter regions.

主权项

1. A method for implementing a deep trench enabled high current capable bipolar transistor comprising:
providing a deep oxygen implant in a selected region of a substrate; forming a first deep trench and a second deep trench above the deep oxygen implant; said first deep trench being a generally large rectangular box deep trench of minimum width and said second deep trench being a second small area deep trench centered within the first rectangular box deep trench, wherein providing a deep oxygen implant includes creating an etch stop for said first deep trench and said second deep trench; providing highly doped regions both inside and outside of the first deep trench and around an outside of the second deep trench; providing a collector and an emitter respectively with said highly doped regions, and provides a base region with a substrate region between said collector and said emitter regions.