发明名称 Sequential electrostatic discharge (ESD)-protection employing cascode NMOS triggered structure
摘要 An Electrostatic Discharge (ESD) protection circuitry comprises a protection device structure. The protection device structure includes at least one transistor with a gate operably connected to a pad. The at least one transistor turns on upon an ESD event and conducting charge to a substrate. At least one additional transistor with a gate operably connected to the substrate turns on after the at least one transistor upon an ESD protection event.
申请公布号 US8810981(B2) 申请公布日期 2014.08.19
申请号 US201213538361 申请日期 2012.06.29
申请人 Exar Corporation 发明人 Ojala Pekka Kalervo;Fan Shi-Ping
分类号 H02H3/22;H02H9/04;H02H3/20;H01L27/02 主分类号 H02H3/22
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. An Electrostatic Discharge (ESD) protection circuitry comprising: a protection device structure including: at least one transistor with a gate operably connected to a pad, the at least one transistor turning on in response to an ESD event and conducting charge to a substrate; andat least one additional transistor with a gate operably connected to the substrate,wherein the at least one additional transistor is configured to turn on after the at least one transistor in response to the ESD event,wherein the at least one transistor and at least one additional transistor are operably further connected to transistors in a cascode configuration and comprising gates connected to a supply voltage.
地址 Fremont CA US