High frequency circuit and high frequency module

摘要

A high frequency circuit and a high frequency module are provided, in which the accuracy of compensation operation is improved in compensating by digital control. The amplification gain of an amplification element of an amplifier unit is controlled by a bias current of a bias control unit. A process monitoring circuit of a calibration circuit includes a first and a second element characteristic detector and a voltage comparator. The detectors convert the current of replica elements into a first and a second detection voltage. The voltage comparator compares a first and a second detection voltage and supplies a comparison output signal to a search control unit. Responding to the comparison output signal of the comparator and a clock signal of a clock generating unit, the controller generates a multi-bit digital compensation value according to a predetermined search algorithm, and the bias control unit of the second detector is feedback-controlled.

主权项

1. A high frequency circuit comprising:
a high-frequency power amplifier circuit including an amplifier unit and a bias control unit; a process monitoring circuit; a search control unit; and a clock generating unit, wherein amplification gain of an amplification transistor configuring the amplifier unit of the high-frequency power amplifier circuit is controlled by a bias current of the amplification transistor set up by the bias control unit, wherein the process monitoring circuit comprises a first element characteristic detector, a second element characteristic detector, and a voltage comparator, wherein a first replica transistor of the first element characteristic detector, a second replica transistor of the second element characteristic detector, and the amplification transistor of the amplifier unit are formed by the same semiconductor manufacturing process, wherein the first element characteristic detector converts a first output current of the first replica transistor into a first detection voltage, wherein the second element characteristic detector converts a second output current of the second replica transistor into a second detection voltage, wherein the voltage comparator compares the first detection voltage with the second detection voltage, and supplies a comparison output signal to the search control unit, wherein, in response to a clock signal generated by the clock generating unit and to the comparison output signal of the voltage comparator, the search control unit generates a multi-bit digital error compensation value for minimizing a difference between the first detection voltage and the second detection voltage according to a predetermined search algorithm, wherein the second element characteristic detector and the bias control unit are feedback-controlled, in response to the digital error compensation value finally stored in the search control unit according to the predetermined search algorithm, wherein the first replica transistor is fixed such that a constant current flows through the first replica transistor, and wherein the second replica transistor is fixed such that a variable current which is feedback-controlled by the search control unit flows through the second replica transistor.