Film deposition apparatus and substrate process apparatus

摘要

A disclosed film deposition apparatus has a separation gas supplying nozzle between reaction gas nozzles arranged away from each other in a rotation direction of a turntable on which a substrate is placed, and a ceiling member providing a lower ceiling surface on both sides of the separation gas supplying nozzle. In this film deposition apparatus, the separation gas supplying nozzle and the reaction gas nozzles are removably arranged along a circumferential direction of a chamber, and the ceiling member is removably attached on a ceiling plate of the chamber.

主权项

1. A film deposition apparatus for depositing a film on a substrate by carrying out plural cycles of supplying in turn at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber, the film deposition apparatus comprising:
a turntable provided rotatable on a vertical axis in the chamber and including plural substrate receiving areas, formed on a front surface, in which the plural substrates are placed along a rotation direction of the turntable; a first reaction gas supplying portion configured to supply a first reaction gas to the front surface of the turntable to form a first process area; a second reaction gas supplying portion configured to supply a second reaction gas to the front surface of the turntable to form a second process area, the first reaction gas supplying portion and the second reaction gas supplying portion being arranged away from each other in the rotation direction of the turntable in the chamber; a ceiling member removably provided between the turntable and a ceiling plate of the chamber and between the first process area and the second process area downstream relative to the rotation direction of the turntable with respect to the first reaction gas supplying portion in order to create over the turntable a thin space for impeding the first reaction gas and the second reaction gas from entering the thin space to form a first separation area between the first process area and the second process area such that the distance between the first reaction gas supplying portion and the ceiling member is controlled by the size of the ceiling member in accordance with a process to be carried out in the film deposition apparatus; a first separation gas supplying portion configured to supply a first separation gas to the front surface of the turntable in the first separation area for separating atmospheres of the first process area and the second process area; a center area located in substantially a center portion in the chamber and including a gas ejection opening for ejecting a second separation gas to the front surface of the turntable, thereby separating the atmospheres of the first process area and the second process area; and an evacuation port that evacuates the first reaction gas and the second reaction gas along with the first separation gas that spreads on both sides of the first separation area and the second separation gas ejected from the center area, wherein the ceiling member is provided with a groove portion that extends in a radial direction, and the first separation gas supplying portion is housed in the groove portion.