Full-band and high-CRI organic light-emitting diode

摘要

The present invention relates to a full-band and high-CRI organic light-emitting diode, comprising: a first conductive layer, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer. In the present invention, a plurality of dyes are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, wherein the chromaticity coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE (Commission International de'Eclairage) Chromaticity Diagram, moreover, the specific area fully encloses the Planck's locus on 1931 CIE Chromaticity Diagram, such that the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.

主权项

1. A full-band and high-CRI organic light-emitting diode, comprising:
a first conductive layer; at least one first carrier transition layer, being formed on the first conductive layer; a plurality of light-emitting layers, being formed on the first carrier transition layer; at least one second carrier transition layer, being formed on the light-emitting layer; and a second conductive layer, being formed on the second carrier transition layer; wherein a plurality of dyes are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, therefore the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.