发明名称 MEMS device and interposer and method for integrating MEMS device and interposer
摘要 A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.
申请公布号 US8809135(B2) 申请公布日期 2014.08.19
申请号 US201012697713 申请日期 2010.02.01
申请人 The Charles Stark Draper Laboratory, Inc. 发明人 Sawyer William D.
分类号 H01L21/58;B81B7/00 主分类号 H01L21/58
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A Microelectromechanical Systems (MEMS) apparatus produced by a method comprising: obtaining an SOI wafer, which comprises: (i) a handle layer,(ii) a dielectric layer on said handle layer, and(iii) a device layer on said dielectric layer; etching said device layer of said SOI wafer to at least partially define said MEMS device; obtaining an interposer wafer; bonding said SOI wafer to said interposer wafer in a way such that said device layer of said SOI wafer faces said interposer wafer; removing said handle layer of said SOI wafer; and removing said dielectric layer of the SOI wafer, wherein said interposer wafer is manufactured from an SOI wafer, wherein said interposer wafer comprises: (i) a handle layer,(ii) a dielectric layer on said handle layer, and(iii) a device layer on said dielectric layer.
地址 Cambridge MA US