Method for manufacturing semiconductor device

摘要

To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film comprising indium and zinc by sputtering over a substrate; and heating the oxide semiconductor film to increase crystallinity of the oxide semiconductor film, wherein the oxide semiconductor film after the heating exhibits a peak in a range of 30°≦2θ≦35° when the oxide semiconductor film is measured by an X-ray diffraction method.