Method for forming pattern

摘要

A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern.

主权项

1. A method for forming a pattern comprising:
providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer, the first positive-working radiation-sensitive resin composition comprising:
a crosslinking agent;a polymer containing an acid-unstable group and not containing a crosslinking group;a radiation-sensitive acid generator; anda solvent; exposing the first resist layer selectively to radiation through a first mask; developing the exposed first resist layer to form a first resist pattern; making the first resist pattern inactive to radiation, or insolubilizing the first resist pattern in an alkaline developer or in a second positive-working radiation-sensitive resin composition; providing the second positive-working radiation-sensitive resin composition on the substrate on which the first resist pattern has been formed to form a second resist layer; exposing the second resist layer selectively in a space area of the first resist pattern to radiation through a second mask; and developing the exposed second resist layer to form a second resist pattern in the space area of the first resist pattern, wherein the crosslinking agent is a compound having two or more groups shown by a following formula (1), a compound having two or more epoxy groups or oxetane groups, or a compound having two or more vinyl groups and a skeleton shown by any one of following formulas (12-1) to (12-4), wherein R1 and R2 each independently represent a hydrogen atom or a group shown by a following formula (2), at least one of R1 and R2 being a group shown by the following formula (2), wherein R3 and R4 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an alkoxyalkyl group having 1 to 6 carbon atoms, or R3 and R4 taken together represent a ring having 2 to 10 carbon atoms, and R5 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,