| 发明名称 | Method for removing polishing byproducts and polishing device | ||
| 摘要 | A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts. | ||
| 申请公布号 | US8808063(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201113308526 | 申请日期 | 2011.11.30 |
| 申请人 | Semiconductor Manufacturing International (Shanghai) Corporation | 发明人 | Chen Feng;Li Mingqi |
| 分类号 | B24B21/18 | 主分类号 | B24B21/18 |
| 代理机构 | Anova Law Group, PLLC | 代理人 | Anova Law Group, PLLC |
| 主权项 | 1. A method for removing polishing byproducts, the method comprising: providing a positive electrode on a center of a polishing platen and a negative electrode on an edge of the polishing platen; applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished; and rotating the polishing platen and rinsing a polishing pad with deionized water or chemical cleaning solution so as to remove polishing byproducts that are formed in the polishing process. | ||
| 地址 | Shanghai CN | ||