Methods, systems and devices for electrostatic discharge protection

摘要

A resistor-equipped transistor includes a package that provides an external collector connection node (114, 134), an external emitter connection node (120, 140) and an external base connection node (106, 126). The package contains a substrate upon which a transistor (102, 122), first and second resistors, and first and second diodes are formed. The transistor has an internal collector (118, 138), an internal emitter (120, 140) and an internal base (116, 136) with the first resistor (104, 124) being electrically connected between the internal base and the external base connection node and the second resistor (108, 128) being electrically connected between the internal base and the internal emitter. The first and second diodes are electrically connected in series between the external base connection node and the external collector connection node with the first diode (112, 132) having a first cathode-anode orientation that is opposite of a second cathode-anode orientation corresponding to the second diode (110, 130).

主权项

1. A resistor-equipped transistor comprising:
a package providing an external collector connection node, an external emitter connection node and an external base connection node and containing: a substrate having an epitaxial layer and supporting
a transistor having an internal collector, an internal emitter and an internal base;a first resistor electrically connected between the internal base and the external base connection node;a second resistor electrically connected between the internal base and the internal emitter;a first diode having a cathode and an anode; anda second diode having a cathode and an anode, the first and second diodes electrically coupled in series between the external base connection node and the external collector connection node with the first diode in a first cathode-anode orientation that is opposite of a second cathode-anode orientation corresponding to the second diode, wherein the substrate includes a first region within a first part of the epitaxial layer to form either a common anode or a common cathode of the first and second diodes, and includes a second part of the epitaxial layer on the first part, wherein a further region is within the epitaxial layer to form the internal base of the transistor, and wherein the emitter of the transistor is formed by an implanted third region in the further region.