| 发明名称 | Electrostatic discharge (ESD) guard ring protective structure | ||
| 摘要 | An electrostatic discharge (ESD) protection circuit structure includes several diffusion regions and a MOS transistor. The circuit structure includes a first diffusion region of a first type (e.g., P-type or N-type) formed in a first well of the first type, a second diffusion region of the first type formed in the first well of the first type, and a first diffusion region of a second type (e.g., N-type or P-type) formed in a first well of the second type. The first well of the second type is formed in the first well of the first type. The MOS transistor is of the second type and includes a drain formed by a second diffusion region of the second type formed in a second well of the second type bordering the first well of the first type. | ||
| 申请公布号 | US8809961(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201314056034 | 申请日期 | 2013.10.17 |
| 申请人 | Taiwan Semiconductor Manufacturing Co., Ltd. | 发明人 | Tsai Tsung-Che;Lee Jam-Wem;Chang Yi-Feng |
| 分类号 | H01L29/66;H01L23/62 | 主分类号 | H01L29/66 |
| 代理机构 | Duane Morris LLP | 代理人 | Duane Morris LLP |
| 主权项 | 1. An electrostatic discharge (ESD) protection circuit structure comprising: a first diffusion region of a first type formed in a first well of the first type; a second diffusion region of the first type formed in the first well of the first type; a first diffusion region of a second type formed in a first well of the second type, wherein the first well of the second type is formed in the first well of the first type; and a MOS transistor of the second type including a drain formed by a second diffusion region of the second type formed in a second well of the second type bordering the first well of the first type. | ||
| 地址 | Hsin-Chu TW | ||