Power semiconductor diode, IGBT, and method for manufacturing thereof

摘要

A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a drift region of the first conductivity type arranged between the first emitter region and the second emitter region. The drift region forms a pn-junction with the second emitter region. A first emitter metallization is in contact with the first emitter region. The first emitter region includes a first doping region of the first conductivity type and a second doping region of the first conductivity type. The first doping region forms an ohmic contact with the first emitter metallization, and the second doping region forms a non-ohmic contact with the first emitter metallization. A second emitter metallization is in contact with the second emitter region.

主权项

1. A power semiconductor diode, comprising:
a semiconductor substrate comprising a first emitter region of an n-conductivity type, a second emitter region of a p-conductivity type, and a drift region of the n-conductivity type arranged between the first emitter region and the second emitter region, the drift region forming a pn junction with the second emitter region; a first emitter metallization in contact with the first emitter region, the first emitter region comprising a first doping region of the n-conductivity type and a second doping region of the n-conductivity type, the first doping region forming an ohmic contact with the first emitter metallization, the second doping region forming a non-ohmic contact with the first emitter metallization; a second emitter metallization in contact with the second emitter region; and a field stop region of the n-conductivity type between the drift region and the first emitter region, the field stop region having a doping concentration higher than the drift region and lower than the first doping region of the first emitter region, the field stop region being at least in direct contact with the first doping region of the first emitter region; wherein the semiconductor substrate has a second surface on which the second emitter metallization is formed, a first surface opposite the second surface on which the first emitter metallization is formed, and a lateral edge that is parallel to the first surface and perpendicular to a vertical direction that is normal to the first surface and the second surface; the second emitter region is spaced apart from the lateral edge by a first distance; and the first doping region is spaced apart from the lateral edge at least by the first distance.