| 发明名称 | Fabrication of MOS device with schottky barrier controlling layer | ||
| 摘要 | Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into the drain; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench; and disposing a contact electrode within the active region contact trench. | ||
| 申请公布号 | US8809143(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201213725789 | 申请日期 | 2012.12.21 |
| 申请人 | Alpha & Omega Semiconductor Limited | 发明人 | Bhalla Anup;Wang Xiaobin;Pan Ji;Wei Sung-Po |
| 分类号 | H01L21/8234 | 主分类号 | H01L21/8234 |
| 代理机构 | Van Pelt, Yi & James LLP | 代理人 | Van Pelt, Yi & James LLP |
| 主权项 | 1. A method of fabricating a semiconductor device, comprising: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into a drain; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench, wherein the Schottky barrier controlling layer does not extend substantially into the body; and disposing a contact electrode within the active region contact trench. | ||
| 地址 | BM | ||