发明名称 |
Dry metal etching method |
摘要 |
A method of etching an aluminum-containing layer on a substrate is described. The method includes forming plasma from a process composition containing a halogen element, and exposing the substrate to the plasma to etch the aluminum-containing layer. The method may additionally include exposing the substrate to an oxygen-containing environment to oxidize a surface of the aluminum-containing layer and control an etch rate of the aluminum-containing layer. The method may further include forming first plasma from a process composition containing HBr and an additive gas having the chemical formula CxHyRz (wherein R is a halogen element, x and y are equal to unity or greater, and z is equal to zero or greater), forming second plasma from a process composition containing HBr, and exposing the substrate to the first plasma and the second plasma to etch the aluminum-containing layer. |
申请公布号 |
US8808562(B2) |
申请公布日期 |
2014.08.19 |
申请号 |
US201113230721 |
申请日期 |
2011.09.12 |
申请人 |
Tokyo Electron Limited |
发明人 |
Ohsawa Yusuke;Ohtake Hiroto;Suzuki Eiji;Kumar Kaushik Arun;Metz Andrew W. |
分类号 |
B44C1/22;H01J37/32;H01L21/3213 |
主分类号 |
B44C1/22 |
代理机构 |
Wood, Herron & Evans, LLP |
代理人 |
Wood, Herron & Evans, LLP |
主权项 |
1. A method for etching a metal-containing layer on a substrate, comprising:
disposing a substrate having an aluminum-containing layer formed thereon in a plasma processing system; forming plasma from a process composition containing a halogen element; exposing said substrate to said plasma to etch said aluminum-containing layer while simultaneously exposing said substrate to an oxygen-containing environment to oxidize a surface of said aluminum-containing layer and control an etch rate of said aluminum-containing layer. |
地址 |
Tokyo JP |