Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance

摘要

A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.

主权项

1. A magnetoresistive sensor, comprising:
a magnetic free layer structure; a magnetic pinned layer structure comprising a lamination of layers of Co2FeX and a layer Co2MnX, where X is a material selected from the group consisting of Al, Ge and Si, wherein the layer of Co2MnX is sandwiched between the layers of Co2FeX; and a non-magnetic layer sandwiched between the free layer structure and the pinned layer structure wherein one of the layers of Co2FeX acts as a diffusion barrier to prevent the Mn from diffusion from the layer of Co2MnX into the non-magnetic layer.