Low leakage and/or low turn-on voltage Schottky diode

摘要

A Schottky diode and a method of manufacturing the Schottky diode are disclosed. The Schottky diode has an N-well or N-epitaxial layer with a first region, a second region substantially adjacent to an electron doped buried layer that has a donor electron concentration greater than that of the first region, and a third region substantially adjacent to the anode that has a donor electron concentration that is less than that of the first region. The second region may be doped with implanted phosphorus and the third region may be doped with implanted boron.

主权项

1. A Schottky diode, comprising:
an electron donor doped buried layer; an anode; a cathode; and an N-well or N-type epitaxial layer including:
a first region having a donor electron concentration;a second region substantially adjacent to the electron doped buried layer and having a donor electron concentration that is greater than that of the first region, wherein the second region includes implanted phosphorus donor electrons; andan N-type third region substantially adjacent to the anode and having a donor electron concentration that is less than that of the first region, wherein the third region includes boron.