| 摘要 |
A light emitting device comprises a first semiconductor layer; a potential mitigation layer which is disposed on the first semiconductor layer and includes a nitride semiconductor having Al; an activating layer which is disposed on the first semiconductor layer; and a second semiconductor layer which is disposed on the activating layer, wherein the potential mitigation layer includes a first relaxation layer configured to increase the content ratio of Al and a second relaxation layer configured to decrease the content ratio of Al. |
