METHOD AND APPARATUS FOR GROWING A GROUP (III) METAL NITRIDE FILM AND A GROUP (III) METAL NITRIDE FILM

摘要

A PROCESS AND APPARATUS FOR GROWING A GROUP (III) METAL NITRIDE FILM BY REMOTE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION ARE DESCRIBED. THE PROCESS COMPRISES HEATING AN OBJECT SELECTED FROM THE GROUP CONSISTING OF A SUBSTRATE AND A SUBSTRATE COMPRISING A BUFFER LAYER IN A GROWTH CHAMBER TO A TEMPERATURE IN THE RANGE OF FROM ABOUT 400ºC TO 10 ABOUT 750ºC, PRODUCING ACTIVE NEUTRAL NITROGEN SPECIES IN A NITROGEN PLASMA REMOTELY LOCATED FROM THE GROWTH CHAMBER AND TRANSFERRING THE ACTIVE NEUTRAL NITROGEN SPECIES TO THE GROWTH CHAMBER. A REACTION MIXTURE IS FORMED IN THE GROWTH CHAMBER, THE REACTION MIXTURE CONTAINING A SPECIES OF A GROUP (III) METAL THAT IS CAPABLE OF REACTING WITH THE NITROGEN SPECIES SO AS TO FORM A GROUP (III) METAL NITRIDE FILM AND A FILM OF GROUP (III) S METAL NITRIDE IS FORMED ON THE HEATED OBJECT UNDER CONDITIONS WHEREBY THE FILM IS SUITABLE FOR DEVICE PURPOSES. ALSO DESCRIBED IS A GROUP (III) METAL NITRIDE FILM WHICH EXHIBITS AN OXYGEN CONCENTRATION BELOW 1.6 ATOMIC%.