发明名称 PATTERN FORMING PROCESS
摘要 A pattern is formed by coating a first resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn insoluble in organic solvent upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a first negative pattern; heating the negative pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in an organic solvent developer to form a second negative pattern. The first and second negative patterns are simultaneously formed.
申请公布号 US2014227643(A1) 申请公布日期 2014.08.14
申请号 US201414156609 申请日期 2014.01.16
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 Hatakeyama Jun;Katayama Kazuhiro
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A pattern forming process comprising the steps of: coating a first chemically amplified resist composition onto a processable substrate, said first resist composition comprising a resin comprising recurring units having an acid labile group which is eliminatable with acid so that it may turn insoluble in an organic solvent developer as a result of the acid labile group being eliminated, a photoacid generator capable of generating an acid upon exposure to high-energy radiation, and a first organic solvent, prebaking the coating to remove the unnecessary solvent and to form a resist film, exposing patternwise the resist film to high-energy radiation, post-exposure baking, and developing in the organic solvent developer to form a first negative pattern, heating the first negative pattern to render it resistant to a second organic solvent used in a second resist composition to be subsequently coated, coating the second resist composition comprising a resin and the second organic solvent onto the negative pattern-bearing substrate, prebaking, exposing, post-exposure baking, and developing in an organic solvent developer to form a second negative pattern, whereby the negative pattern of the first resist composition and the negative pattern of the second resist composition are simultaneously formed.
地址 Tokyo JP