发明名称 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
摘要 A semiconductor device having a contact structure is provided. The semiconductor device includes: a conductive region; a first film and a second film which are formed over the conductive region to realize a layer; and a contact electrode which extends through the layer to the conductive region, and is formed so as to replace a portion of the layer with a portion of the contact electrode, where the portion of the layer is constituted by only the first film, only the second film, or both of a portion of the first film and a portion of the second film, and the portion of the first film occupies a major part of the portion of the layer.
申请公布号 US2014227873(A1) 申请公布日期 2014.08.14
申请号 US201414259186 申请日期 2014.04.23
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 MORIOKA HIROSHI;OGURA JUSUKE;PIDIN SERGEY
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项 1. A producing method of a semiconductor device, comprising: forming a conductive region; forming a first film and a second film over the conductive region to realize a layer; forming a contact hole extending to the conductive region through the layer so as to remove a portion of the layer, where the portion of the layer is constituted by only the first film, only the second film, or both of a portion of the first film and a portion of the second film, and the portion of the first film occupies a major part of the portion of the layer; and forming a contact electrode in the contact hole.
地址 YOKOHAMA-SHI JP