发明名称 |
SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME |
摘要 |
A semiconductor device having a contact structure is provided. The semiconductor device includes: a conductive region; a first film and a second film which are formed over the conductive region to realize a layer; and a contact electrode which extends through the layer to the conductive region, and is formed so as to replace a portion of the layer with a portion of the contact electrode, where the portion of the layer is constituted by only the first film, only the second film, or both of a portion of the first film and a portion of the second film, and the portion of the first film occupies a major part of the portion of the layer. |
申请公布号 |
US2014227873(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201414259186 |
申请日期 |
2014.04.23 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
MORIOKA HIROSHI;OGURA JUSUKE;PIDIN SERGEY |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A producing method of a semiconductor device, comprising:
forming a conductive region; forming a first film and a second film over the conductive region to realize a layer; forming a contact hole extending to the conductive region through the layer so as to remove a portion of the layer, where the portion of the layer is constituted by only the first film, only the second film, or both of a portion of the first film and a portion of the second film, and the portion of the first film occupies a major part of the portion of the layer; and forming a contact electrode in the contact hole. |
地址 |
YOKOHAMA-SHI JP |