发明名称 |
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME |
摘要 |
Example embodiments relate to a three-dimensional semiconductor memory device including an electrode structure on a substrate, the electrode structure including at least one conductive pattern on a lower electrode, and a semiconductor pattern extending through the electrode structure to the substrate. A vertical insulating layer may be between the semiconductor pattern and the electrode structure, and a lower insulating layer may be between the lower electrode and the substrate. The lower insulating layer may be between a bottom surface of the vertical insulating layer and a top surface of the substrate. Example embodiments related to methods for fabricating the foregoing three-dimensional semiconductor memory device. |
申请公布号 |
US2014227841(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201414258436 |
申请日期 |
2014.04.22 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Jaegoo;JEONG Kil-Su;KIM Hansoo;PARK Youngwoo |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-Si KR |