THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A three dimensional semiconductor device and a method of fabricating the same are provided. The three dimensional semiconductor device comprises: a lower structure having a lower gate pattern and a lower semiconductor pattern connected to a substrate by passing through the lower gate pattern; and an upper structure having upper gate patterns stacked on the lower structure, an upper semiconductor pattern connected to the lower semiconductor pattern by passing through the upper gate patterns, and a vertical insulator interposed between the upper semiconductor pattern and the upper gate patterns. The lower semiconductor pattern may have a recess area closely arranged to the lower gate pattern and defined by inclined surfaces against the substrate.