| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, when forming a semiconductor device from silicon carbide, it may be difficult to obtain required depths of p-base and nsource regions using acceptable diffusion times and temperatures.SOLUTION: A method of forming a semiconductor device may include the step of forming a terminal region of a first conductivity type within a semiconductor layer of the first conductivity type. A well region of a second conductivity type may be formed within the semiconductor layer, the well region is neighboring to at least a part of the terminal region and may be deeper than that of the terminal region, and the first and second conductivity types may be different. An epitaxial semiconductor layer may be formed on the semiconductor layer and a terminal contact region of the fist conductivity type to provide electrical contact with the terminal region may be formed within the epitaxial semiconductor layer. |
