发明名称 N-TYPE DIFFUSION LAYER FORMATION COMPOSITION, MANUFACTURING METHOD OF N-TYPE DIFFUSION LAYER, AND MANUFACTURING METHOD OF SOLAR CELL ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide an n-type diffusion layer formation composition capable of forming an n-type diffusion layer on a specific part without forming an unnecessary n-type diffusion layer in a manufacturing step of a solar cell element using a silicon substrate, and preventing a lifetime of carriers from largely decreasing in a substrate having the n-type diffusion layer obtained thereby, a manufacturing method of the n-type diffusion layer, and a manufacturing method of the solar cell element.SOLUTION: The n-type diffusion layer formation composition contains: a glass powder, containing a donor chemical element, in which a total amount of lifetime killer chemical elements is 1000 ppm or less; and a dispersion medium. By coating the n-type diffusion layer formation composition and performing a thermal diffusion treatment, an n-type diffusion layer and a solar cell element having the same are manufactured.
申请公布号 JP2014146808(A) 申请公布日期 2014.08.14
申请号 JP20140035732 申请日期 2014.02.26
申请人 HITACHI CHEMICAL CO LTD 发明人 MACHII YOICHI;YOSHIDA MASATO;NOJIRI TAKESHI;OKANIWA KAORU;IWAMURO MITSUNORI;ADACHI SHUICHIRO;SATO TETSUYA;KIZAWA KEIKO
分类号 H01L21/225;C03C3/097;H01L21/322;H01L31/068 主分类号 H01L21/225
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