| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting element which inhibits generation of cracks in an active layer and improves a radiant power output.SOLUTION: A group III nitride semiconductor light-emitting element 100 of the present embodiment sequentially has an n-type clad layer 14, an active layer 20 and a p-type clad layer 16. The active layer 20 has a multiquantum well structure in which barrier layers 22 each composed of AlGaN(0≤X<1) and well layers 24 each composed of a group III nitride semiconductor are alternately stacked one by one. An Al content x of the barrier layer 22 gradually increases as toward a first barrier layer 22A on the n-type clad layer 14 side and a second barrier layer 22B on the p-type clad layer 16 side on the basis of an intermediate barrier layer having the minimum Al content Xmin among intermediate barrier layers 22C. An Al content X1 of the first barrier layer 22A, an Al content X2 of the second barrier layer 22B and Xmin satisfy relationships represented as: X2+0.01≤X1 and Xmin+0.03≤X2. |
