SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

摘要

In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

主权项

1. A substrate processing apparatus for processing a substrate, comprising:
an annular supporting part having an annular shape around a central axis directed in a vertical direction, for supporting an outer edge portion of a substrate in a horizontal state from below; a lower surface facing part having a facing surface which faces a lower surface of said substrate inside said annular supporting part; a rotating mechanism for rotating said annular supporting part together with said substrate around said central axis relatively to said lower surface facing part; a first processing liquid supply part for supplying a first processing liquid onto an upper surface of said substrate; a second processing liquid supply part for supplying a second processing liquid onto said lower surface of said substrate from a processing liquid nozzle provided at said lower surface facing part; and at least one gas ejection nozzle protruding from said facing surface, for ejecting heated gas toward said lower surface of said substrate.