3D STRUCTURED MEMORY DEVICES AND METHODS FOR MANUFACTURING THEREOF

摘要

A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated from the p+ region.

主权项

1. A method for forming an n+ region and a p+ region at a source/drain region, the method comprising:
exposing a region of undoped channel material in a recess; forming the n+ region in the exposed region; forming a diffusion barrier material in the recess; forming the p+ region adjacent to the diffusion barrier material in the recess.