| 发明名称 |
NON-VOLATILE MEMORY SYSTEM WITH RESET CONTROL MECHANISM AND METHOD OF OPERATION THEREOF |
| 摘要 |
A method of operation of a non-volatile memory system includes: providing a control field effect transistor having a source electrode and a body-tie electrode; coupling a resistive storage element to the source electrode; and opening a well switch coupled to the body-tie electrode for increasing a well voltage and resetting the resistive storage element by the source electrode floating on the well voltage. |
| 申请公布号 |
US2014226390(A1) |
申请公布日期 |
2014.08.14 |
| 申请号 |
US201313764605 |
申请日期 |
2013.02.11 |
| 申请人 |
SONY CORPORATION |
发明人 |
Kitagawa Makoto;Otsuka Wataru;Sumino Jun;Kunihiro Takafumi;Tsushima Tomohito |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of operation of a non-volatile memory system comprising:
providing a control field effect transistor having a source electrode and a body-tie electrode; coupling a resistive storage element to the source electrode; and opening a well switch coupled to the body-tie electrode for increasing a well voltage and resetting the resistive storage element by the source electrode floating on the well voltage. |
| 地址 |
Tokyo JP |
