METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE AND SEMICONDUCTOR WAFER USING SAID SUBSTRATE

摘要

A composite substrate (1) includes: a support substrate (11) including, as a crystal phase, 35-65% by mass of a mullite phase, and 35-65% by mass of an alumina phase; and a semiconductor film (13) disposed on the main surface (11m) of the support substrate (11). A method for manufacturing a semiconductor wafer (3) includes: a step for preparing the composite substrate (1); a step for growing at least one semiconductor layer (20) on the semiconductor film (13) of the composite substrate to form a composite substrate (2) having a semiconductor layer; and a step for removing the support substrate (11) from the composite substrate (2) having a semiconductor layer to form the semiconductor wafer (3). A method is thus provided for manufacturing a composite substrate suitable for manufacturing a high-quality semiconductor wafer with high yield and good efficiency, and a semiconductor wafer using same.