| 摘要 |
New methods are provided for manufacturing a semiconductor device. Preferred methods of the invention include depositing a photoresist on a semiconductor substrate surface followed by imaging and development of resist coating layer; applying a curable organic or inorganic composition over the resist relief image; etching to provide a relief image of the resist encased by the curable composition; and removing the resist material whereby the curable organic or inorganic composition remains in a relief image of increased pitch relative to the previously developed resist image. |
