SEMICONDUCTOR DEVICE HAVING TSV AND METHOD OF FORMING THE SAME

摘要

An insulating layer is formed on a semiconductor substrate. A through hole which penetrates the semiconductor substrate and the insulating layer is arranged. A through silicon via (TSV) is formed in the through hole. A spacer is formed between the semiconductor substrate and the TSV. A line connected to the TSV is formed on the insulating layer. A barrier layer which covers the side and bottom of the line and the side of the TSV is formed. The barrier layer is an integrated form.