发明名称 |
INTERCONNECT WIRING SWITCHES AND INTEGRATED CIRCUITS INCLUDING THE SAME |
摘要 |
An electronic circuit, includes a plurality of electronic devices configured as interconnected to provide one or more circuit functions and at least one interconnect structure that includes a first patterned conductor connected to a terminal of a first electronic device in the electronic circuit. A second patterned conductor is connected to a terminal of a second electronic device in the electronic circuit. A first electrode is connected to a portion of the first patterned conductor, and a second electrode is connected to a portion of the second patterned conductor. A metal oxide region is formed between the first electrode and the second electrode. The metal oxide region provides a reprogrammable switch function between the first patterned conductor and the second patterned conductor by providing a conductivity that is selectively controlled by a direction and an amount of current that passes through the metal oxide region during a switch setting operation for the metal oxide region. |
申请公布号 |
US2014225165(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201313766028 |
申请日期 |
2013.02.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Gates Stephen M.;Edelstein Daniel C.;Gopalakrishnan Kailash;Muralidhar Ramachandran |
分类号 |
H01L27/112 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
1. An electronic circuit, comprising:
a plurality of electronic devices configured as interconnected to provide one or more circuit functions; and at least one interconnect structure comprising:
a first patterned conductor connected to a terminal of a first electronic device in said electronic circuit;a second patterned conductor connected to a terminal of a second electronic device in said electronic circuit;a first electrode connected to a portion of the first patterned conductor;a second electrode connected to a portion of the second patterned conductor; anda metal oxide region formed between said first electrode and said second electrode, wherein said metal oxide region provides a reprogrammable switch function between said first patterned conductor and said second patterned conductor by providing a conductivity that is selectively controlled by a direction and an amount of current that passes through said metal oxide region during a switch setting operation for said metal oxide region, wherein said first and second electrodes maintain a separation between said metal oxide and said patterned conductors, and wherein said metal oxide region provides a function as a reprogrammable selection device to circumvent a fabrication failure or defect of a chip containing said electronic circuit. |
地址 |
Armonk NY US |