DIODE BASED ON LDMOS TRANSISTOR, AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a diode based on an LDMOS transistor, and electrostatic discharge protection circuit including the same.SOLUTION: A diode 1000 based on an LDMOS transistor comprises a cathode electrode ECTH and an anode electrode EAN. The cathode electrode includes a gate 610 of a P-type LDMOS transistor, and an N-type doping region 420 formed in an N-type well 320 region of the P-type LDMOS transistor. The anode electrode includes a P-type doping region 410 formed in a P-type drift region 310 of the P-type LDMOS transistor.