| 摘要 |
PROBLEM TO BE SOLVED: To increase a bond strength between a connection terminal and an electrode in a semiconductor device and a manufacturing method of the same.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming barrier metal films 23, 27 on at least one surfaces of a first electrode 22 of a wiring board 21 and a second electrode 26 of a semiconductor element 25; a process of arranging, between the first electrode 22 and the second electrode 26, a connection terminal 24 made from a solder containing tin, bismuth, and zinc; and a process of bonding the connection terminal 24 to each of the first barrier metal film 23 and the second barrier metal film 27 by heating the connection terminal 24 and maintaining a temperature of the connection terminal 24 at a constant temperature Tequal to or higher than a melting point Tof the solder for a predetermined amount of time. |
