发明名称 WIRING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 A wiring substrate includes, a base wiring substrate including a first wiring layer, a first insulating layer in which the first wiring layer is buried and a first via hole is formed under the first wiring layer, and a second wiring layer formed under the first insulating layer and connected to the first wiring layer through the first via hole, and a re-wiring portion including a second insulating layer formed on the base wiring substrate and having a second via hole formed on the first wiring layer, and a re-wiring layer formed on the second insulating layer and connected to the first wiring layer through the second via hole. The re-wiring layer is formed of a seed layer and a metal plating layer provided on the seed layer, and the seed layer is equal to or wider in width than the metal plating layer.
申请公布号 US2014225275(A1) 申请公布日期 2014.08.14
申请号 US201314141765 申请日期 2013.12.27
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 SHIMIZU Noriyoshi;KANEDA Wataru;ROKUGAWA Akio;KOYAMA Toshinori
分类号 H01L23/498 主分类号 H01L23/498
代理机构 代理人
主权项 1. A wiring substrate, comprising: a base wiring substrate including a first wiring layer,a first insulating layer in which the first wiring layer is buried and a first via hole is formed under the first wiring layer, anda second wiring layer formed under the first insulating layer and connected to the first wiring layer through a via conductor in the first via hole; and a re-wiring portion including a second insulating layer formed on the base wiring substrate, the second insulating layer in which a second via hole is formed on the first wiring layer, anda re-wiring layer formed on the second insulating layer and connected to the first wiring layer through a via conductor in the second via hole,wherein, the re-wiring layer is formed of a seed layer and a metal plating layer formed on the seed layer, and a width of the seed layer is equal to or wider than a width of the metal plating layer.
地址 Nagano-shi JP