| 发明名称 |
Methods and Apparatus for ESD Structures |
| 摘要 |
Methods and apparatus are disclosed for ESD protection circuits. An ESD protection circuit may comprise a first region of an n type material, a second region of a p type material adjacent to the first region, a third region of an n type material within the second region and separated from the first region, and a fourth region of a p type material within the third region. There may be multiple parts within the first region and the second region, made of different n type or p type materials. An ESD protection circuit may further comprise a fifth region of a p type material, contained within the first region. |
| 申请公布号 |
US2014225157(A1) |
申请公布日期 |
2014.08.14 |
| 申请号 |
US201313763337 |
申请日期 |
2013.02.08 |
| 申请人 |
COMPANY, LTD. TAIWAN SEMICONDUCTOR MANUFACTURING |
发明人 |
Kuo Hsi-Yu;Chen Chi-Kuang |
| 分类号 |
H01L29/74;H01L29/66 |
主分类号 |
H01L29/74 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a first region on the substrate comprising a first n type material; a second region on the substrate comprising a first p type material and adjacent to the first region; a third region comprising a second n type material within the second region and separated from the first region by an isolation area; and a fourth region comprising a second p type material within the third region. |
| 地址 |
US |
