SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece.

主权项

1. A semiconductor light-emitting element including:
a support substrate; a semiconductor film including a light-emitting layer provided on said support substrate; a surface electrode provided on a light-extraction-surface-side surface of said semiconductor film; and a light-reflecting layer provided between said support substrate and said semiconductor film, forming a light-reflecting surface on a surface bordering said semiconductor film; wherein said surface electrode includes a first electrode piece for forming an ohmic contact with said semiconductor film, and a second electrode piece electrically connected to said first electrode piece and adapted for forming an ohmic contact with said semiconductor film; wherein said light-reflecting layer includes a reflection electrode, said reflection electrode including a third electrode piece forming an ohmic contact with said semiconductor film, and a fourth electrode piece electrically connected to said third electrode piece, arranged opposite said second electrode piece, and adapted for forming a Schottky contact with said semiconductor film and forming a barrier inhibiting a forward current in said semiconductor film; wherein said first electrode piece and said third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of said semiconductor film; and wherein a shortest distance, in a direction of a principal surface of said semiconductor film, between said third electrode piece and said second electrode piece, is greater than a shortest distance, in the direction of the principal surface of said semiconductor film, between said third electrode piece and said first electrode piece.