SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

According to one embodiment, a semiconductor light emitting device includes a first metal layer, a second metal layer, a third metal layer, a semiconductor light emitting unit and an insulating unit. The semiconductor light emitting unit is separated from the first metal layer in a first direction. The second metal layer is provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, and is light-reflective. The second metal layer includes a contact metal portion, and a peripheral metal portion. The third metal layer is light-reflective. The third metal layer includes an inner portion, a middle portion, and an outer portion. The insulating unit includes an first insulating portion, a second insulating portion, and a third insulating portion.

主权项

1. A semiconductor light emitting device, comprising:
a first metal layer; a semiconductor light emitting unit separated from the first metal layer in a first direction; a second metal layer provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, the second metal layer being light-reflective, the second metal layer including
a contact metal portion contacting the semiconductor light emitting unit, anda peripheral metal portion provided around the contact metal portion when projected onto a plane perpendicular to the first direction, the peripheral metal portion having an outer edge portion separated from the semiconductor light emitting unit; a third metal layer being light-reflective, the third metal layer including
an inner portion provided between the semiconductor light emitting unit and the outer edge portion,a middle portion overlapping the semiconductor light emitting unit and not overlapping the outer edge portion when projected onto the plane, andan outer portion outside the semiconductor light emitting unit when projected onto the plane; and an insulating unit including
an first insulating portion provided between the middle portion and the semiconductor light emitting unit and between the inner portion and the semiconductor light emitting unit,a second insulating portion provided between the inner portion and the first metal layer and between the outer portion and the first metal layer, anda third insulating portion continuous with the first insulating portion and the second insulating portion.