VERTICAL GALLIUM NITRIDE TRANSISTORS AND METHODS OF FABRICATING THE SAME

摘要

A vertical gallium nitride transistor according to an exemplary embodiment of the present invention includes a semiconductor structure including a first semiconductor layer of a first conductivity-type having a first surface and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the first surface and the sidewalls of the first semiconductor layer, and a third semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other.

主权项

1. A vertical gallium nitride transistor, comprising:
a first semiconductor layer of a first conductivity type comprising a first surface, a second surface opposite to the first surface, and sidewalls; a second semiconductor layer of the first conductivity type surrounding the second surface and the sidewalls of the first semiconductor layer; a third semiconductor layer of a second conductivity type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other; a source electrode disposed on the first surface of the first semiconductor layer, the source electrode being electrically connected to the first semiconductor layer; a gate electrode disposed on a first surface of the third semiconductor layer between the first and second semiconductor layers; and a drain electrode, wherein the second semiconductor layer is disposed on a first surface of the drain electrode, wherein the first semiconductor layer, the semiconductor layer, and the second semiconductor layer comprise a semiconductor structure.