| 发明名称 |
METHOD OF CONTROLLING THE CRYSTALLINITY OF A SILICON POWDER |
| 摘要 |
A method of controlling the crystallinity of a silicon powder may include heating a reactor to a temperature of no more than 650° C., and flowing a feed gas comprising silane and a carrier gas into the reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon. According to another embodiment, a method of controlling the crystallinity of a silicon powder may include flowing a feed gas comprising silane and a carrier gas into a heated reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2, and maintaining an internal reactor pressure of about 2 atm or less during the flowing of the feed gas into the heated reactor. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon. |
| 申请公布号 |
US2014225030(A1) |
申请公布日期 |
2014.08.14 |
| 申请号 |
US201414179921 |
申请日期 |
2014.02.13 |
| 申请人 |
Hemlock Semiconductor Corporation ;Dow Corning Corporation |
发明人 |
Dehtiar Max;Herron William;Hwang Byung K.;Larimer Jennifer;Schrauben Mark;Tabler Raymond |
| 分类号 |
C01B33/027 |
主分类号 |
C01B33/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of controlling the crystallinity of a silicon powder, the method comprising:
heating a reactor to a temperature of no more than 650° C.; flowing a feed gas comprising silane and a carrier gas into the reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2; and decomposing the silane to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon. |
| 地址 |
Hemlock MI US |
